IndiumV3, Russie, Analysis, bibRecord, 000010

The influence of p-doping on two-state lasing in InAs/InGaAs quantum dot lasers

Identifieur interne : 000010 ( Russie/Analysis ); précédent : 000009; suivant : 000011

The influence of p-doping on two-state lasing in InAs/InGaAs quantum dot lasers

Auteurs : RBID : Pascal:14-0004079

Descripteurs français

Pascal (Inist)
- Dopage modulé, Laser point quantique, Courant seuil, Etat fondamental, Puissance sortie, Arséniure d'indium, Arséniure de gallium, Point quantique, InAs, InGaAs.

English descriptors

KwdEn :
- Gallium arsenides, Ground states, Indium arsenides, Modulation doping, Output power, Quantum dot lasers, Quantum dots, Threshold current.

Abstract

Two-state lasing in devices based on undoped and p-type modulation-doped InAs/InGaAs quantum dots is studied for various cavity lengths and temperatures. Modulation doping of the active region strongly enhances the threshold current of two-state lasing, preserves ground-state lasing up to higher temperatures and increases ground-state output power. The impact of modulation doping is especially strong in short cavities.

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Pascal:14-0004079

Le document en format XML

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<front><div type="abstract" xml:lang="en">Two-state lasing in devices based on undoped and p-type modulation-doped InAs/InGaAs quantum dots is studied for various cavity lengths and temperatures. Modulation doping of the active region strongly enhances the threshold current of two-state lasing, preserves ground-state lasing up to higher temperatures and increases ground-state output power. The impact of modulation doping is especially strong in short cavities.</div>
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The influence of p-doping on two-state lasing in InAs/InGaAs quantum dot lasers

The influence of p-doping on two-state lasing in InAs/InGaAs quantum dot lasers

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri